Photovoltaic & Application Device Characterization

 

Properties and Device Characterization

Air photoemission system with scanning Kelvin probe – APS04-KP Technology

The APS04 systems measure the absolute work function of a material by Photoemission in Air, no vacuum required. With an excitation range of 3.3eV to over 7eV, the APS04 systems are capable of measuring the absolute Work Function of Metals and the full bands of Semicondcutors can be measured in one system, no other product can do this

Ultra-violet/visible transmission/reflectance/absorption spectroscopy with integrating sphere – PerkinElmer Lambda 650S

The Lambda 650S soectrometer is a versatile instrument peration in the ultraviolet and visible spectral ranges. The spectrometer features a double-beam, double-monochromator, ratio-recording otpical system

External Quantum Efficiency system – LOT SpeQuest

Apart from IV curves, the most important measurement on solar cells is that of the quantum efficiency. Our SpeQuest system is based on monochromatic light sources for measurements in the UV range

Current-voltage (IV) measurement station – LOT IV Station

The basis for IV curve measurements of solar cells is a temporally stable illumination spectrum close to that of the sun, provided by a solar simulator. If the solar simulator is combined with a contacting unit, a source meter as electronic load and corresponding controlling and analyzing software you have a complete IV curve measurement system

Photoluminescence (PL) measurement system – Agilent Cary Eclipse

Computer-controlled ratioing fluorescence spectrophotometer with measurement modes for fluorescence, phosphorescence, chemiluminescence and bioluminescence. Czerny-Turner 0.125 m monochromators, 190–1100 nm wavelength range, fixed selectable SBW from 1.5 to 20 nm, full spectrum Xe pulse lamp single source with exceptionally long life, horizontal beam geometry, dual R928 PM tubes

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Deep level transient spectroscopy (DLTS) – Semilab DLS

DLTS is a powerful tool for the study of electrically active defects (known as traps) in semiconductors. DLTS is a destructive technique, as it requires forming either a Schottky diode or a p-n junction with a small sample. Majority carrier traps are observed by the application of a reverse bias pulse, while minority carrier traps can be observed by the application of a forward bias pulse.